****er

The collector current, IC of a BJT flows through two junctions. The drain current of an FET, ID flows through ________ junctions.

0

A CMOS inverter has a +10 V supply and an input that varies between 0 V and +10 V. When the input to the circuit is +10 V, the output from the circuit is ________.

0 V

A CMOS inverter is biased with a +10-V VSS supply. The input to the inverter varies between 0 V and +10 V. When the input to the inverter is +10 V, the output from the circuit is ________.

0 V

For a gate-to-drain voltage less than the threshold level the drain current of an enhancement-type MOSFEE is ________.

0 mA

An E-MOSFET has values of VGSth = 2 V and ID(on) = 8 mA when VGS = 10 V. What is the value of k for the device?

0.000125

A given BJT has an emitter current of 15 mA and a collector current of 14.95 mA. What is the exact value of β?

299

Which of the following biasing combinations is not normally associated with one of the three transistor operating regions?

E-B junction = reverse, C-B junction = forward

VMOS is a special-purpose type of ________.

E-MOSFET

The output or collector characteristics for a common base transistor amplifier shows that as a first approximation the relation between IE and IC in the active region is given by ________.

IE~~IC

MOSFETs are also referred to as ________.

IGFETs

A clamper must have a(n) ________ that is large enough to maintain the capacitor's charge during diode conduction.

RC time constant

The DC or the static resistance of the diode is given by

RD=VD/VI

Which of the following expressions is true?

αdc= IC / IE

Which of the following expressions is true?

αdc= denta IC/ denta IE

Which of the following expressions is true?

βac= denta IC / denta IB

Which of the following expressions is true?

βdc=IC/IB

The simplest biasing arrangement for the n-channel JFET is ________.

fixed bias

The two general categories of clippers are ________.

series and parallel

Variation in hfe is influenced by ________.

junction temperature and collector current

Depending on the configuration of the amplifier, the magnitude of the no-load voltage gain for a single BJT transistor amplifier typically ranges from ________.

just a little less than 1 to a few hundred

When trivalent elements are used in doping, the resulting material is called ________ material and has an excess of ________.

p-type; valence-band holes

The input impedance of a BIT is ________.

resistive

The input impedance of a BJT is ________.

resistive

The output impedance of a BJT is ________.

resistive

For basic operation of a transistor the collector-base junction is ________ biased.

reverse

A Zener diode is designed to operate in the ________ region of its characteristic curve.

reverse breakdown

The condition where an increase in bias current will not cause further increases in collector current is called ________.

saturation

When a BJT transistor is used in a switching circuit, it operates in the ________.

saturation and cutoff regions

When a BJT has its base-emitter junction forward biased and its collector-base junction also forward biased, it is in the ________.

saturation region

The term ________ is applied to a material that has a conductivity level somewhere between the extremes of conductivity.

semiconductor

A given transistor has ratings of maximum collector current equal to 200 mA and a beta that varies between 150 and 200. What is the maximum allowable value of base current for the device?

1 mA

Generally, it is good design practice for linear amplifiers to have operating points that close to ________.

the midpoint of the load line

The typical range of the ac resistance of a diode in the active region is ________.

1 Ω to 100 Ω

A given BJT has an alpha of 0.9985 and a collector current of 15 mA. What is the value of base current?

None of the above

The emitter-follower configuration has ________.

None of the above

The value of gate-to-source voltage that causes JFET drain current to reach its maximum value at a given value of drain voltage is called ________.

None of the above

VCE is measured ________.

None of the above

Which of the following circuit conditions indicates that a bypass capacitor is open?

None of the above

Which transistor amplifier configuration has a 180° current phase shift from input to output?

None of the above

voltage and a variable load resistance, a load resistance that is too small results in ________.

VL being equal to Vz

For the CB configuration breakdown occurs when ________ is too high but in the CC configuration too high a ________ results in breakdown.

Vcb, Vce

For BJT amplifiers, the no-load voltage gain is ________.

greater than the loaded voltage gain.

The h-parameter that is the equivalent of the β of a common-emitter circuit is ________.

h fe

The base input impedance of a BJT is listed on its spec sheet as ________.

h re

The hybrid parameter that is represented by the name hi is ________.

h11

The VMOS FET typically has switching times that are ________.

half that of the typical BJT

The Common-base configuration is unique in the it ________.

has its output taken from the emitter terminal

When a p-n junction is reverse-biased, its junction resistance is ________.

high

Voltage-divider bias stability is ________.

independent of beta

The enhancement-type and the depletion-type FETs are subclasses of ________.

metal-oxide-semiconductor FETs

Using the Early voltage, VCEQ and ICQ you can solve for ________.

output impedance

The ________ terminal of the JFEI' is the equivalent of the emitter terminal of a BJT.

source

Two of the factors associated with bias stability are ________.

the β and the junction temperature

For an n-channel JFET IDSS = 8 mA and Vp = -6 Volts. If ID = 6 mA. What is the value of the gate-to-source voltage, VGS?

-0.8 V

A given JFET has values of VP = -10 V and IDSS = 8 mA. What is the value of VGSOFF for the device?

-5 V

A half-wave rectifier with the diode arrow pointing away from the load has a DC output voltage of ________ for an AC input voltage of 20 V maximum.

-6.14 V

When a transistor is in saturation VCE is approximately equal to ________.

0.3 Volts

The nominal voltage for a 1N961 Fairchild 10-V Zener diode has a temperature coefficient of 0.072. If the temperature increases by 50° C, what is the change in V?

0.36 V

For an n-channel depletion MOSFET, IDSS = 8 mA and VP = -6 Volts. If VGS = 0.8 V, what is the value of the drain current, ID?

0.54 V

What is the value of the voltage dropped across forward-biased silicon diodes that are connected in parallel with each other?

0.7 V

The base current for the circuit below is ________.

0.94 mA

An emitter follower has the following values: hie= 3 kΩ, hfe = 150, and hre = 1.5 kΩ. What is the voltage gain for the circuit?

0.9868

For a given BJT, β = 400. What is the value of α for the device?

0.9975

A series silicon diode circuit has a 2 kΩ resistor and a 10 V source. Determine Vdq if Idq is 4.5 mA.

1 V

The energy required to move an electron in silicon from the valence band to the conduction band is ________.

1.1 eV

A full-wave center-tapped rectifier has a secondary maximum voltage of 20 Vm and a 4.7 kΩ load resistance. What is the dc load current for the circuit?

1.26 mA

A JFET has the following ratings: VP = -2 V to -5 V and an IDSS = 4 mA. The device is being used in a fixed-bias circuit with a gate supply voltage of VGG = 1 V. What is the difference between the minimum and maximum values of ID values for the circuit?

1.56 mA

A JFET has values of IDSS = 10 mA and VGSOFF = -5 V. What is the value of ID at VGS = -3 V?

1.6 mA

A BJT has measured dc current values of IB = 0.1 mA and IC = 8.0 mA. When IB is varied by 100 μA, IC changes by 10 mA. What is the value of the βac for this device?

100

A BJT has measured dc current values of IB = 1 mA and IC = 80 mA. When IB is varied by 100µA IC changes by 10 mA. What is the value of βac for the device?

100

A fixed-bias BJT circuit has values of hFE = 200 and hfe = 120. The ac current gain for the device is ________.

120

A given BJT has an emitter current of 12 mA and a base current of 600 μA. What is the value of βdc?

19

Moore's Law states that transistor count in an integrated circuit will double every ________ years.

2

The fixed-bias technique requires ________ power supplies.

2

A fixed-bias common-emitter amplifier has an unbypassed, 1.2 kΩ emitter resistor, and 270 kΩ base resistor. If re = 5 Ω and β = 200, what is the approximate current gain?

200

Given that a 1000 Hz signal is applied to a clamper with a resistor value of 10 kΩ. What is the minimum value of capacitor needed to maintain safe clamping action?

250 pF

An LED light is expected to last for ________.

25000 hours

An E-MOSFET has values of VDD = 14 V and RD = 2 kΩ. . The device is being used in a circuit that has a value of VGS = 6 V. What is the value of ID for the circuit?

4 mA

Given a series silicon diode circuit with the resistor R = 2 kΩ ohms and an applied voltage of 10 V, what is Idq?

4.65 mA

A common-emitter amplifier with voltage divider bias and a bypassed emitter resistance has values of RC = 10 kΩ, re= 25 Ω, and hFE = 150. What is the value of the voltage gain for the circuit?

400

Pentavalent elements have ________ valence electrons.

5

Suppose that a particular Zener diode has a temperature coefficient of 0.00575. If the temperature of this Zener diode increases by 50° C, what is the change in Vz?

50 × 0.00575 = 0.2875

Given the two-port configuration of a BJT amplifier, determine the input voltage if Vs = 18 mV, Rsence= 600Ω, V0= 3.6 V, and the input current is 20 μA.

6 mV

A Darlington amplifier has values of β1 = 150 and β2 = 50. The net beta for this configuration is ________

7500

A BJT has measured dc current values of IB = 0.1 mA and IC = 8.0 mA. When IB is varied by 100 μA, IC changes by 10 mA. What is the value of the βdc for this device?

80

A BJT has measured dc current values of IB = 1 mA and IC= 80 mA. When IB is varied by 100µa IC changes by 10 mA. What is the value of βdc for the device?

80

A positive full-wave center-tapped rectifier has a secondary voltage of 20 Vm. The peak load voltage for the circuit is ________ if the diode drop is included.

9.3Vp

A characteristic of voltage divider-bias in FET circuits is ________.

A and C only

A collector-feedback bias circuit is found to be in saturation. Which of the following could cause this condition?

A solder bridge across the base resistor.

A JFET can be biased in several different ways. The common method(s) of biasing an n-channel JFET is(are) ________.

All of the above

A p-n junction is reverse biased when ________.

All of the above

Collector-feedback bias ________.

All of the above

D-MOSFETs can operate in ________.

All of the above

FETs usually ________.

All of the above

In the design of an emitter-bias stabilized circuit engineering, judgment must be used because the ________.

All of the above

In the family of FETs, you can expect to find ________.

All of the above

The region of the characteristic curve family for the junction FET that is normally used for linear amplification is ________.

All of the above

To design a transistor circuit for maximum stability, one must consider ________.

All of the above

When compared with commercially available planar MOSFETs, VMOS FETs have ________.

All of the above

When designing a voltage-divider bias circuit, the divider resistors ________.

All of the above

Why is design for a specific bias point desirable for most amplifiers?

All of the above

The Zener diode must be operated such that ________.

All of these

Why are bridge rectifiers preferred over full-wave center-tapped rectifiers?

All the above

The primary difference between BJT and FET types of transistors is that ________.

BJTs are current controlled and FETs are voltage controlled

The FET that typically has the best switching speed performance is a(n) ________.

CMOS

The type of FFT that has the best switching speed performance is the ________.

CMOS

A relatively high input impedance, fast switching speeds, and low operating power describe the characteristics of the ________ family.

CMOS FET

A fixed-bias common-emitter amplifier has an unbypassed, 1.2 kΩ emitter resistor, and 270 kΩ base resistor. If re = 5 Ω and β = 200, what is the voltage gain?

Cannot be determined with information given

Which of the following circuits is used to eliminate a portion of a signal?

Clipper

The ________ terminal of the JFFT is the equivalent of the collector terminal of a BJT.

Drain

The drain characteristics for a FET that you see on a curve tracer are drawn for equal step increases in the VGS values, yet they are spaced further apart as VGS gets closer to zero. Why?

Due to the square relation between ID and VGS, as VGS gets closer to zero ID increases faster so the curves are spaced apart further.

The re transistor model replaces the ________ with the junction diode's ac resistance.

Emitter - base junction

Which material(s) are commonly used in high-speed applications?

GaAs and Ge

The ________ terminal of the JFET is the equivalent of the base terminal of a BJT.

Gate

Why is the arrow on the BJT schematic symbol important?

It identifies the emitter terminal and the type of BJT.

The depletion-type MOSFET' has specifications and many characteristics that are similar to the ________.

JFET

When in its "on" state, the voltage across an ideal Zener diode, Vz________.

None of these

The maximum reverse bias potential that can be applied to a Zener diode before it enters the Zener region is called the ________.

PIV

The change in β and VCE that can occur when the temperature changes is known as ________.

Q-point movement

The most common means of producing multiple BJT networks is ________.

R-C coupling

The Zener diode is on if the applied voltage, V, is ________.

V >= Vz

The most frequent application for a ________ is in regulator networks and as a reference voltage.

Zener diode

Many MOSFET devices now contain internal ________ that protect them from static electricity.

Zener diodes

For VGS < VTH in an enhancement MOSFET the drain current will be ________.

Zero

________ biasing may be used with D-MOSFETs but not with JFETs.

Zero

The piecewise linear model, equivalent circuit of the diode consists of ________.

a battery, a small resistor, and the ideal diode

Which of the following circuits is used to change the dc reference of a signal without changing the shape of the signal?

a clamper

The output impedance of a BiT is ________.

a combination of resistive, capacitive, and inductive

The typical β for a Darlington amplifier is ________.

a much higher value in the range of 4000 to about 40000

The common-base, short-circuit, amplification factor is better known as ________.

ac α

The common-emitter, forward-current, amplification factor is better known as ________.

ac β

When a BJT has its base-emitter junction forward biased and its collector-base junction reverse biased, it is biased in the ________.

active region

In a small-signal transistor, the typical range of the parameter α is ________.

almost equal to 1 but always less than 1 (0.9 to 1.0)

Amplifier ac input and output currents are ________.

always in phase

As the device temperature increases, semiconductor materials tend to have ________.

an increasing number of free electrons

In the saturation region, the base-emitter junction ________.

and the base-collector junctions are both forward-biased

In the cut-off region, the base-emitter junction ________.

and the base-collector junctions are both reverse-biased

The diode electrode with p-type material is called the ________.

anode

The biased clamper has a dc reference voltage that is ________.

approximately equal to the dc voltage that is applied to the diode

A(n) ________ is added to the fixed-bias configuration to improve bias stability.

emitter resistor

A(n) ________ configuration ties the collector of one transistor to the emitter of a second transistor.

cascode

Two Zener diodes connected ________ can be used as an ac regulator.

back-to-back

Many MOSFET devices now contain internal ________ that protect these devices from static electricity.

back-to-back zener diodes

Assume that you notice in a complex network that many of the transistors do not have their collector leads connected. This means that the transitors are most likely ________.

being used as diodes

The common-emitter configuration has a current gain that is equal to ________.

beta

The diode electrode with n-type material is called the ________.

cathode

In the Zener region the current ________ and the voltage across the diode ________.

can increase a lot; is almost constant

A(n) ________ is commonly used to provide transient protection.

clipper

In most cases, which two of the three BJT terminal currents are approximately equal in value?

collector current and emitter current

β is the ratio of ________.

collector current to base current

When a BJT is in cutoff, the collector-to-emitter voltage is typically equal to ________.

collector supply voltage

When a transistor is in saturation, the total collector current is limited by ______.

collector supply voltage and the total resistance in the collector and emitter circuits

When comparing the common emitter and the common collector amplifiers, the input impedance of the common ________ is much larger and the output impedance of the common ________ is much smaller.

collector; collector

A transistor amplifier has an input signal applied to its emitter terminal and an output signal taken from its collector terminal. The amplifier is a(n) ________.

common-base amplifier

Which transistor amplifier configuration has a 180° voltage phase shift from input to output?

common-emitter

Which transistor amplifier configuration is the most commonly used?

common-emitter

CMOS stands for ________.

complementary MOS

In a p-type material, the minority carriers are ________.

conduction-band electrons

In an n-type material, the majority carriers are ________.

conduction-band electrons

The term ________ is applied to any material that supports a generous flow of charge when a voltage source of limited magnitude is applied across its terminals.

conductor

If a zener diode is connected to the base of a transistor, chances are it is a ______.

constant-current source

The common - collector amplifier (emitter-follower) has ________.

current gain and power gain, but no voltage gain

When a BJT has its base-emitter junction reverse biased and its base-collector junction forward biased, it is biased in the ________.

cutoff region

When a BJT has its base-emitter junction reverse biased and its collector-base junction reverse biased, it is in the ________.

cutoff region

The isolated atomic energy structure associated with electron orbital shells is called a/an ________.

energy band

Which of the following FETs is the best choice when the gate-source voltage has both positive and negative swings?

depletion MOSFET

The primary difference between JFETs and depletion-type MOSFETs is ________.

depletion-type MOSFETs can have positive values of VGS and levels of ID that exceed IDSS

The act of giving off light by applying an electrical source of energy is called ___.

electroluminescence

If the resistor in the emitter leg is not bypassed by a capacitor then the voltage gain of the small signal amplifier will ________.

decrease

Replacing a standard transistor with a Darlington pair in an emitter follower causes the voltage gain to ________.

decrease

When silicon is doped with either a pentavalent or a trivalent impurity its resistance will ________.

decrease

As the channel width of a JFET decreases, the source-to-drain resistance ________.

decreases

The collector-feedback bias configuration's input resistance is related to the ____.

device beta

When a BJT is operating in the active region, the voltage drop from the base to the emitter VBE is approximately equal to the ________.

diode drop (about 0.7 V)

The input resistance of a stabilized fixed-bias circuit configuration is ________.

directly related to the emitter resistor

The input impedance of the common-emitter configuration is ________.

directly related to the transistor beta

Pentavalent atoms are often referred to as ________.

donor atoms

Which of the following biasing circuits can be used with E-MOSFETs?

drain-feedback bias

A popular arrangement for enhancement type MOSFET biasing is ________.

drain-feedback biasing

A typical Zener diode regulator circuit uses a ________.

dropping resistor in series with the load

Enhancement-type MOSFETs operate in the ________.

enhancement mode only

To calculate the output impedance the applied signal must be set ________.

equal to zero

In the enhancement type of MOSFET the channel is formed when the gate-to-source voltage ________.

exceeds the threshold voltage

For basic operation of a transistor the base-emitter junction is ________ biased.

forward

Light-emitting diodes emit light when the p-n junction is ________.

forward-biased

When a BJT is biased in the saturation region, its base-emitter junction is ________biased and its collector-base junction is ________biased.

forward; forward

When a BJT is biased in the active region, its base-emitter junction is _____biased and its collector-base junction is ________biased.

forward; reverse

The h-parameter model uses ________ parameters to describe the equivalent circuit of the BJT transistor.

four

As ________ decreases the noise figure increases.

freqency

What two parameters represent the FET transfer characteristic?

gate-to-source voltage and drain current

MOSFETs typically have an input impedance value that is ________.

higher than the JFET

The h-parameter model and the re parameter models are almost identical if the parameter ________ in the h-parameter model is ignored.

hr

Which of the following is true for an n-channel D-MOSFET that is being operated in the depletion mode?

iD < iDss and Vgs is negative

The ________ diode is a short circuit for the region of conduction and it is an open circuit in the region of nonconduction

ideal

The main benefit of a direct-coupled amplifier is ________.

improved low-frequency response

The characteristic of an ideal diode are those of a switch that can conduct current

in one direction only

Amplifier ac input and output voltages are ________.

in phase in all but one amplifier configuration

Generally, it is a good design practice for linear amplifiers to choose the operating point that is approximately ________.

in the center of the active region

The depletion type of MOSFET can operate in the ________.

in the depletion mode and the enhancement mode

The voltage gain of a very well-designed common collector amplifier configuration, using a pnp transistor, is ________.

in the range 0.95 to 0.99

The term quiescent means ________.

inactive

If the resistor in the emitter leg is not bypassed by a capacitor then the input impedance of the small signal amplifier will ________.

increase

An advantage of the miniaturization of electronic devices is that they ________.

increase speed

Doping is used to ________.

increase the conductivity of an intrinsic semiconductor

The term ________ is applied to a material that offers a very low level of conductivity under pressure from an applied voltage.

insulator

The first transistor in a feedback pair ________.

is a pnp

For a two-port system, like a BIT amplifier, the no-load voltage gain ________.

is always greater than the loaded voltage gain

The diffusion capacitance of a diode is a shunt capacitance effect that occurs when the diode ________.

is forward biased

In the active region, the base-emitter junction ________.

is forward-biased while the base-collector junction is reversed-biased

The transition capacitance of a diode is a shunt capacitive effect that occurs when the diode ________.

is reverse-biased

In a self-bias circuit for an n-channel JFET transistor the se1f-bias line ________.

is slanted and passes through origin

In a fixed-bias circuit for an n-channel JFET transistor the bias line ________.

is straight up and down parallel to the ID axis

As the slope of collector current increases the Early voltage ________.

is unchanged

The power-handling levels of a MOSFT ________.

is usually less than 1 W

Silicon diodes have been more significantly developed than germanium because _

it is cheaper

For the common-base configuration, typical values of the output impedance range is ________.

l MΩ to 2 MΩ

In a small-signal transistor, the typical range of the parameter β is ________.

large and in the range of about 50 to 400

Transistor circuits that are quite stable and relatively insensitive to temperature variations have ________.

large betas

When a Zener diode circuit is used to stabilize the output voltage given a fixed load resistor and a variable input voltage, the input voltage must be ________.

large enough to turn on the Zener diode

Which of the following is not a commonly used semiconductor material'?

lead

For an n-channel depletion type of MOSFET, if VGS > 0 then IDSS will be ________ ID.

less than

The value of drain current is always ________ the value of the short circuit drain current IDSS for a given JFET.

less than or equal to

The approximation that allows superposition to be used to isolate the ac analysis and the dc analysis of small-signal amplifiers is that the circuit response is ________.

linear

The common-base amplifier is characterized as having a relatively ________ input impedance and relatively ________ output impedance.

low; high

When using voltage divider-bias in FETamplifiers, increasing the size of the source resistor results in ________.

lower quiescent ID values

As semiconductor devices have become ________ one of the primary purposes of the container is simply to provide a means for physical handling

miniaturized

The analysis that we mostly work with is that of the n-channel device. For p-channel devices the transfer curve employed is the ________ image and the defined current directions are ________.

mirror; reversed

A ________ is a combination of circuit elements, properly chosen, that best approximate the actual behavior of a semiconductor device under specific operating conditions.

model

The feedback pair is similar to the Darlington circuit but it is ________.

more complex

The ________ JFET uses a positive drain supply voltage.

n-channel

When pentavalent elements are used in doping, the resulting material is called ________ material and has an excess of ________.

n-type; conduction-band electrons

There are transistors that are called switching transistors because ________.

of the speed at which they can be changed from on to off

Generally a germanium diode is in the ________ state when the current established by the applied voltage source is in the direction of the diode symbol's arrow and Vd is greater than or equal to 0.3 V.

on

Generally a silicon diode is in the ________ state if the current established by the applied voltage source is in the direction of the diode symbol's arrow and Vd is greater than or equal to 0.7 V.

on

Depending on the configuration of the amplifier, the magnitude of the no-load current gain for a single BJT transistor amplifier typically ranges from ________.

one to about a thousand

The characteristics of an ideal diode are those of a switch that can conduct current in ________.

only one direction

The h22 hybrid parameter is defined as the ________.

open-circuit output admittance

The h12 hybrid parameter is defined as the ________.

open-circuit reverse voltage ratio

The level of drain-to-source voltage where the two depletions regions appear to touch is known as ________.

pinch-off

When the diode in a half-wave rectifier points toward the load, the output from the rectifier is ________.

positive

Some of the modern ohmmeters have a diode test setting. If you do not have one of these ohmmeters then to test the diode you need to check its resistance in the forward and the reverse direction. These resistances should be

relatively low in the forward direction and relatively high in the reverse direction

If a bypass capacitor opens, the value of re ________.

remains the same

Applying an input signal to one of the inputs of differential amplifier and connecting the other input to ground, you create a ________ configuration.

single-ended

The self-bias configuration develops the controlling gate-to-source voltage across a resistor introduced in the ________.

source leg

For levels of gate-to-source voltage greater than the threshold voltage, the drain current is directly related to the ________.

square of the difference between the gate-to-source voltage and the threshold voltage

A major disadvantage of MOSFETs is ________.

that it is sensitive to electrostatic discharges

The re transistor model replaces the base-emitter junction with ________.

the ac resistance of the forward-biased diode at the operating point

A p-n junction is forward biased when ________.

the applied potential causes the n-type material to be more negative than the p-type material.

When a BJT is biased in the cutoff region the collector-to-emitter voltage is typically equal to ________

the collector supply voltage

An LED produces visible or invisible light when ________.

the electrons and the holes combine with each other

The EM0SFET can operate in ________.

the enhancement mode only

The feedback pair and the Darlington pair are very similar to each other. One difference between them is ________.

the feedback pair uses one npn and one pnp transistor

The ideal diode symbol has an arrow that points in the direction of ________.

the forward current flow

If one silicon diode and one germanium diode are connected in series, the voltage drop across the combination of the two diodes will be equal to ________.

the forward drop equal to that of the difference of the voltage drops across the two diodes

When tested with an ohmmeter, a diode should have a relatively small resistance for ________ condition.

the forward-biased

Which of the following is usually used to control the channel width of a given JFET?

the gate-to-source voltage

BJTs are commonly used as ________.

the primary components in amplifiers

When tested with an ohmmeter, a diode should have a relatively high resistance for ________ condition.

the reverse-biased

The region of the JFET drain curve that lies between pinch-off and breakdown is called ________.

the saturation region

The difference between the resulting equations for a network in which an npn transistor has been replaced by a pnp transistor is ________.

the sign associated with the particular quantities

When the output signal to a clamper circuit is clamped to zero, the total swing of the output is equal to ________.

the total input voltage swing

Schokley's equation defines the ________ of the FET and are unaffected by the network in which the device is employed.

transfer characteristics

The FET transfer characteristic curve is defined by Shockley's equation and is ________.

unaffected by the network in which it is used

When a p-n junction's depletion layer is narrowed and the device acts as a nearly perfect conductor, it is ________.

unbiased

When analyzing a diode circuit with both a dc and ac source ________.

use superposition

When voltage-divider bias is used, it is considered appropriate to use the approximate analysis to determine the bias condition when the resistance R2 is ________ ( 1 + β)RE.

very much greater than

It is important to remember that when the JFET is used as a voltage variable resistor, which is one of its practical applications, the voltage VDS is ________ VDS(max) and |VGS| is ________ |Vp|.

very much less than; very much less than

Bypass capacitors are chosen to ensure that the values of XC are ________ at the amplifier's operating frequency.

very small

Coupling capacitors are chosen to ensure that the values of XC are ________ at the amplifier's operating frequency.

very small

The common-base amplifier has ________.

voltage gain and power gain, but no current gain

The common-emitter amplifier has ________.

voltage gain, current gain, and power gain

The JFET is a ________.

voltage-controlled device

When designing for best bias stability the ________ configuration should be chosen.

voltage-divider bias

When a p-n junction is reverse-biased, the depletion layer is ________ and the device acts as a near-perfect ________.

widened; insulator

When a BJT is operating in the saturation region the voltage drop from the collector to the emitter VCE is approximately equal to ________.

zero (about 0.3 Volts)

The maximum current in a JFET is defined as IDSS and occurs when VGS is equal to ________.

zero Volts