ENGR 220 Final Chapters: 17,18, 20, 21
Optical Properties of Insulators&Semiconductors
-Band structure...with band gaps... • May be transparent or opaque to visible light • Thus, also need consider refraction and transmission
For an Extrinsic semiconductor
-n≠p - Occurs when impurities with different # valence e- than Si host are added (doping)
μr
-relative permeability (unitless) -measure of degree to which material can be magnetized, or ease B-field can be induced in presence of external H-field
Domains in Ferromagnetic & Ferrimagnetic Materials
As the applied field (H) increases the magnetic domains change shape and size by movement of domain boundaries.
Applied Magnetic Field (Field Vector)
Created by current flow through a coil (solenoid)
Ef = Fermi Energy (level)
Energy corresponding to highest filled e- state
BOND RUPTURE
due to heat, radiation or chemical reaction
If Egap < 1.8 eV
full absorption; opaque (Si, GaAs)
Consequences of Scission (3)
- Chain separation - Reduction in MW - Reduction of mechanical properties (brittleness, cracking, discoloration)
For metals, resistivity is increased by (3)
- Deformation - Increasing defects; imperfections, alloying, etc. - Increasing temperature
Polymers
- Degradation... - Dissolve in solvents...absorb & swell - UV radiation & heat can break covalent bonds
For semiconductors, conductivity is increased by (2)
- Increasing temperature - Doping (e.g., adding B to Si (p-type) or P to Si (n-type)
Hard magnetic materials:
- Large coercivities (High resistance to demagnetization) and remanence - Used for permanent magnets
Electrical conductivity and resistivity are (2)
- Material parameters - Geometry independent
Magnetic moment for an electron (2)
- Orbital motion of e- around nucleus - Electron spin
Causes of Scission (4)
- Radiation (e-beams, X-rays, gamma rays, etc.) Ø UV, Oxygen & Ozone - Heat - Weathering
When light (em radiation) shines on a material, it may be:
- Reflected, absorbed, transmitted, Scattered
Ceramics
- Relatively deterioration-resistant - Issue mainly at high temps & v. extreme environments
Soft magnetic materials:
- Small coercivities and remanence - Used for electric motors
Optical classification:
- Transparent, translucent, opaque
Corrosion may be controlled by (5)
- Using metals which form a protective oxide layer - Reducing T - Adding inhibitors - Painting - Using cathodic protection
Magnetic Induction (B) Summary :
- occurs when material subjected to a magnetic field - is a change in magnetic moment from UNPAIRED electrons
e- always has
- orbital magnetic moment - spin magnetic moment
H called (2)
-Externally applied magnetic field -magnetic field strength
3 Types of Magnetism
-Ferromagnetic and Ferrimagnetic (large χm) -Paramagnetic (small χm) -Diamagnetic (very very small χm, can not be magnetized)
n-type Semiconductors (3)
-Loosely bound e- occupies energy state within forbidden band gap --Excitation supplies or "donates" e- to conduction band -Because e- excited from "donor" impurity level, just below the conduction band, no hole left in valence band
p-type Semiconductors (3)
-Weakly bound hole liberated from impurity atom via thermally excited transfer of e- from adjacent bond -Excited holes participate in conduction -Impurity atoms introduce "Acceptor" energy state within band gap, just above valence band...no free e- in impurity level or CB
hc
1240 ev nm
Visible Light:
400-700 nm
Conductors, semiconductors, and insulators
Differ in accessibility of energy states for conduction electrons
Anything that decreases e- mobility (μe)
will increase resistivity
Electron Transitions
Ø Excitation e- from one occupied state to vacant higher energy state Ø Only specific values of ΔE allowed Ø All photon energy absorbed Ø e- cannot remain in excited state forever...decays back to ground state Ø Re-emits photon(s)
Net magnetic moment for an atom:
Ø Sum of magnetic moments from all electrons Ø orbital moments of some e- pairs will cancel each other Ø same true for spin moments
Electronic Polarization
Ø em wave includes fluctuating E-field Ø E-field interacts with e- cloud around each atom Ø Perturbs or shifts e- cloud relative to nucleus: - some radiation energy may be absorbed - light waves retarded in vel. in medium...refraction
Photon energy
ΔE = hν = hc/ λ E= Energy (J) λ= Wavelength (m) v or f= Frequency (Hz) h= Planck's constant (6.62 x 10-34 J.s) c= Speed of light (3 x 108 m/s)
spontaneously
ΔV must be +ve for the reaction to proceed spontaneously in the direction assumed Nernst equation
Ohm'sLaw
ΔV=I*R (current*resistance)
equation for μr
μr = μ/μ0
Conductivity
σ = 1/ρ (p is resistivity)
For an intrinsic semiconductor
σ = ni|e|(μe +μh) # electrons = # holes (i.e. n = p = ni)
Conduction in metals
σ=n|e|μe σ = 1/ρ
n-type Extrinsic: (n >> p)
σ≈n|e|μe
p-type Extrinsic: (p >> n)
σ≈p|e|μh
Selective Absorption: Semiconductors
• Absorption by electron transition occurs if hν > Egap
Refractive Index, n
• Transmitted light distorts electron clouds • Light is slower in a material vs. in vacuum n = refractive index ≡ c (velocity of light in vacuum) /v (velocity of light in medium)
You cannot have magnetism without
unpaired electrons
Equation for Drift Velocity
vd = μe*E μe=electron mobility
Oxidation
Metals lose or give up valence e- e- generated from oxidized metal atom become part of another chemical species:
B is called
Flux Density or Induction
Magnetization of solid
M
physiochemical SWELLING & DISSOLUTION
Polymers exposed to liquids
Metals (Conductors)
Thermal energy excites many e- into higher, empty, available energy states
Oxidation occurs at the ?
anode
Color determined by
light wavelengths that are transmitted or re-emitted from electron VB to CB transitions
Optical Properties of Metals: Absorption
All frequencies visible light absorbed: Ø Metals opaque to all em radiation at low end of f-spectrum Ø Most absorbed radiation re-emitted from surface, gen. w. same λ...i.e. as reflected light
Drift Velocity, Vd
Average e- vel. in direction of force due to applied E-field
Magnetic Flux Density (Field Vector)
B
Equation for M
B = μ0H + μ0M
Equation for B, and equation for B in a vacuum
B = μH B0 = μ0H
Refraction:
Bending" of light
BOND RUPTURE by Scission
Breakage/rupture of bonds within molecular chain
Corrosion
Chemical reaction with transfer of e- from one material to another
Deterioration Mechanisms Polymers
Degradation
corrosion
ELECTROCHEMICAL
Atomic & Electronic Interactions 2 Key Optical Phenomena
Electronic Polarization Electron Transitions
Overall Corrosion
MUST have at least 1 Oxidation + 1 Reduction reaction
electron mobility
Frequency of scattering events
Electrical resistance is
Geometry and material dependent parameter
Relation for the applied magnetic field, H
H= NI/L -H=Applied magnetic field units = (Ampere-turns/m) -N= # Turns - I = Current (A) - L= Coil Length (m)
SEMICONDUCTORS TWO TYPES
INTRINSIC & EXTRINSIC
B is
Magnitude of internal field strength within material subjected to H-field
Incident light either transmitted, absorbed, reflected or scattered:
Io = IT +IA +IR +IS
J = E*σ
J= current density E= Electric Field σ= conductivity
Metal corrosion
Loss of material via dissolution
Magnitude of M proportional to applied H-field
M=χm*H
degradation
Polymers physiochemical
Resistance (Ω)
R = ρl/a (resistively (constant for material)* length)/ area
Deterioration Mechanisms Ceramics
Relatively deterioration-resistant
Refraction
Speed of transmitted light varies among materials
Units of B
Tesla
Color may be changed by
adding impurities which change the band gap (Eg) magnitude
Reduction occurs at the?
cathode
Hysteresis and Permanent Magnetization
coercivity & remanence saturation
Dissolution
complete solubility
Deterioration Mechanisms Metals
corrosion,oxidation
# of e- and holes in semiconductors
increase with T
In presence of H-field
magnetic moments within material align with field and reinforce it by virtue of their magnetic fields (μ0M)
χm
magnetic susceptibility (also unites) χm = μr - 1
If Egap in between, partial absorption
material has color
Metals with a more negative Standard Electrode Potential
more likely to corrode relative to other metals
Electrical Conductivity of SEMICONDUCTORS
n= # of electrons/m^3 μe= electron mobility p= number of holes/m^3 μh= hole mobility
If Egap > 3.1 eV
no absorption; colorless/transparent (diamond)
Two types of band structures in metals:
o Partially filled o Overlapping
Electron (e-) accelerated in direction
opposite to E-field
Swelling
partial dissolution w. limited solubility
μ0
permeability of vacuum (4π x 10-7 H/m)
μ
permeability...property of medium through which H-field passes and B-field is measured
Galvanic Series
ranks the reactivity of metals in seawater
Increasing T
speeds up oxidation/reduction reactions
Net magnetic moment
sum of magnetic moments of all e- (both orbital and spin), taking cancellation into account