eet121sima 1/16
VDB normally operates in the
active region
the Q point of a VDB circuit is
almost totally insensitive to changes in current gain
suppose the base resistor is open .the Q point will be
at the lower end of the load line
if the current gain is unknown in an emitter-biased circuit, you cannot calculate the
base current
the current gain of a transistor is defined as the ratio of the collector current to the
base current
for emitter bias,the voltage at emitter is 0.7V less than the
base voltage
For maximum Vce, where should the Q-point be placed?
centered on the load line
the Q point of TSEB does not depend on the
current gain
the collector voltage of a VDB circuit is not sensitive to changes in the
current gain
if the emitter resistance decreases with TSEB, the collector voltage will
decrease
with VDB and increase in collector resistance will
decrease the collector voltage
as the temp increases the current gain
decreases,increases, stays the same
when the collector current increases what does the current gain do?
decreases,stays the same increases
if the base resistor has zero resistance the transistor will probably be
destroyed
if the emitter resistance is reduced by one-half in a VDB circuit, the collector current will
double
if a transistor operates at the middle of the load line ,a decrease in the current gain will move the Q point
down
if the emitter resistance doubles with TSEB, the collector current will
drop in half
VDB has a stable Q point like
emitter bias
a circuit with a fixed emitter current is called
emitter bias
which is the largest current in a pop transistor
emitter current
the first step in analyzing emitter-based circuits is to find the
emitter voltage
if a splash of solder shorts the collector resistor of TSEB, the collector voltage will
equal the collector supply voltage
if the base resistor opens with TSEB, the collector voltage will
equal the collector supply voltage
for the emitter bias,the voltage across the emitter resistor is the same as the voltage between the emitter and the
ground
if the emitter resistor is open, the collector voltage is
high
when there is no base current in a transistor switch , the output voltage from the transistor is
high
the majority carriers in the emitter of a PNP transistor are
holes
if the collector resistor opens in a base biased circuit, the load line will become
horizontal
if the collector resistance decreases in a VDB circuit , the collector voltage will
increase
when the base resistor increases the collector voltage will probably
increase
the major advantage of a photo-transistor as compared to a photodiode is its
increased sensitivity
if the emitter resistance increases,the collector voltage
increases
when the Q point moves along the load line ,Vce decreases when the collector current
increases
with voltage -divider bias , the base voltage is
less than the base supply voltage
if the collector resistor is open the collector voltage is
low
three different q points are shown on a load line . the upper Q point represents the
maximum current gain
the base voltage of two supply emitter bias (TSEB) is
near 0 volt
if the base supply voltage is disconnected the collector emitter voltage will equal
off the load line
VDB needs
only one supply
the currents of a pnp transistor are
opposite npn current
what DMM polarity connection is needed on an npn transistors base to get a 0.7V reading
positive
if the emitter resistance decreases, the
q point moves up
when the current gain increases from 50 to 300 in an emitter biased circuit,the collector current
remains almost the same
with pnp volt-divider bias you must be
resistors
At what point on the load line does saturation occur? At what point does cutoff occur?
sat occurs at intersection of the load line and the Y axis cutoff occurs at the intersection of the load line and the IB=0 curve
if the base resistance is very small the transistor will operate in the
saturation region
in TSEB the base current must be
small
VDB is noted for its
stable Q point
Define Q-point.
the Q-point is the dc point at which a transistor is biased and is specified by VCE and IC
with a TSEB pnp circuit using a negative Vcc supply, the emitter voltage is
0.7 higher than base voltage
the collector current is 1.5mA. if the current gain is 50, the base current is
30uA
the base current is 50A, if the current gain is 100, the collector current is closest in value to
5mA
the current gain of a pnp transistor is
the ratio of collector current to base current
when testing an npn transistor using an ohmmeter , the collector -emitter resistance will be low when
the transistor is defective
What are the upper and lower limits on a dc load line in terms of VCE and IC?
the upper load line limit is IC(SAT) and VCE(sat). the lower limit is IC=0 and VCE(cutoff)
when using a DMM to test a transistor , an approximate reading of 0.7 will be found with how many polarity connections
two
if a transistor operates at the middle of the load line, a decrease in the base resistance will move the q point
up
if the base supply voltage increases, the Q point moves
up
the graph of current gain verses collector current indicates that current gain
varies slightly
ignoring the bulk resistance of the collector diode , the collector emitter saturation voltage is
zero 0